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| BUL53BSMD MECHANICAL DATA Dimensions in mm ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR 3 .6 0 (0 .1 4 2 ) M ax. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 3 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 * CERAMIC SURFACE MOUNT PACKAGE * FULL MIL/AEROSPACE TEMPERATURE RANGE * SCREENING OPTIONS FOR MILITARY AND SPACE APPLICATIONS * SEMEFAB DESIGNED AND DIFFUSED DIE * HIGH VOLTAGE (VCBO = 800V) * FAST SWITCHING (tf = 100ns) * HIGH ENERGY RATING 0 .7 6 (0 .0 3 0 ) m in . 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1) 9) 6) 4) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) FEATURES * Multi-Base design for efficient energy distribution across the chip. * SIgnificantly improved switching and energy ratings across full temperature range. * Ion implant and high accuracy masking for tight control of characteristics from batch to batch. * Triple guard rings for improved control of high voltages. SMD1 Pad 1 - Base Pad 2 - Collector Pad 3 - Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IB PD R? Tj Tstg Collector - Base Voltage Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage (IC = 0) Collector Current Peak Collector Current Base Current Power Dissipation Thermal Impedance (when mounted on thermally conducting PCB) Maximum Junction Temperature Storage Temperature Range Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 500V 250V 10V 12A 20A 3A 60W 3.0C/W 200C -55 to +200C Prelim. 7/00 Semelab plc. BUL53BSMD ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter VCEO(sus)* V(BR)CBO* V(BR)EBO* ICEO* ICBO* IEBO* Collector - Emitter sustaining voltage Collector - Base breakdown voltage Emitter - Base breakdown voltage Collector cut-off current Collector - Base cut-off current Emitter cut-off current Collector - Emitter saturation voltage Base - Emitter saturation voltage Base - Emitter saturation voltage DC Current gain IC = 0 IC = 100mA IC = 2A IC = 5A IC = 2A IC = 5A IC = 1A IC = 100mA hFE* IC = 2A IC = 5A Test Conditions IC = 100mA IC = 1mA IB = 1mA IB = 0 IE = 0 IC = 0 VCE = 250V VCB = 500V TC = 125C VEB = 5V TC = 125C IB = 10mA IB = 200mA IB = 500mA IB = 200mA IB = 500mA VCE = 4V VCE = 4V VCE = 4V VCE = 4V Min. 250 500 10 Typ. Max. Unit V V V 100 10 100 10 100 0.05 0.15 0.3 0.8 0.9 0.8 20 20 20 45 40 0.1 0.3 0.6 1.1 1.2 1.0 mA mA mA VCE(sat)* V VBE(sat)* VBE(on)* V V -- * Pulse test tp = 300ms , d 2% DYNAMIC CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter fT Cob Transition frequency Output capacitance Test Conditions IC = 100mA f = 10MHz VCB = 20V f = 1.0MHz IE = 0 VCE = 4V Min. Typ. 20 200 Max. Unit MHz pF Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/00 |
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